?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc838 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current 30 ma p c collector power dissipation 250 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 35 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 30 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 4 v i cbo collector cut-off current v cb =30v, i e =0 0.1 a i ebo emitter cut-off current v eb =4v, i c =0 0.1 a h fe dc current gain v ce =12v, i c =2ma 40 240 v be (on) base-emitter on voltage v ce =6v, i c =1ma 0.65 0.70 0.75 v v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma 0.1 0.4 v f t current gain bandwidth product v ce =10v, i c =1ma 100 250 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 2.0 3.2 pf classification r o y h fe 40 ~ 80 70 ~ 140 120 ~ 240 ksc838 fm radio rf amp, mix, conv, osc, if amp ? high current gain bandwidth product : f t =250mhz (typ.) ? suffix ?-c? means center collector (1. emitter 2. collector 3. base) 1. emitter 2. base 3. collector to-92 1
?2001 fairchild semiconductor corporation ksc838 rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product 012345678910 0 1 2 3 4 5 6 7 8 9 10 i b = 90 a i b = 80 a i b = 10 a i b = 20 a i b = 70 a i b = 60 a i b = 50 a i b = 40 a i b = 30 a i c [ma], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 10 100 1000 v ce =12v h fe , dc current gain i c [ma], collector current 0.1 1 10 0.01 0.1 1 10 v ce(sat) v be(sat) i c =10i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 8 12 16 20 24 28 32 v ce =12v i c [ma], collector current v be [v], base-emitter voltage 110100 1 10 f = 1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage 110 10 100 1000 v ce =10v f t [mhz], current gain bandwidth product i c [ma], collector current
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc838 dimensions in millimeters
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